Very high density RF MIM capacitors (17 fF/μm2) using high-/spl kappa/ Al2O3 doped Ta2O5 dielectrics

Using high-/spl kappa/ Al
₂
O
₃
doped Ta
₂
O
₅
dielectric, we have obtained record high MIM capacitance density of 17 fF/μm
²
at 100 kHz, small 5% capacitance reduction to RF frequency range, and low leakage current density of 8.9×10/sup -7/ A/cm
²
. In combination of both high capacitor density and low leakage current density, a very low leakage current of 5.2×10/sup -12/ A is calculated for a typical large 10 pF capacitor used in RF IC that is even smaller than that of a deep sub-μm MOSFET. This very high capacitance density with good MIM capacitor characteristics can significantly reduce the chip size of RF ICs.