The physical and numerical implications of the noise modeling method: IFM, CPM, and ERS

In this paper, several aspects of the numerical methods for the noise modeling are introduced such as the impedance field method, the characteristic potential method, and the extended Ramo-Shockley theorem and their implications are discussed. The challenges faced in the 1/f noise modeling of MOSFETs and suggestions for the direction of the noise modeling are also discussed.