Rectifying effect in boron nanowire device

Ni and Ti have been used as contact electrodes to the crystalline boron nanowires synthesized by catalyzed chemical vapor deposition method. Three-terminal electrical measurements showed that boron nanowire behaves as p-type semiconductor. Ni forms ohmic contact to the nanowire and Ti-nanowire forms Schottky junction. Rectifying effect has been observed for devices with Ni as one electrode and Ti as the other one.