Low defects and high quality Al/sub 2/O/sub 3/ Ge-on-insulator MOSFETs

High quality and dislocation free Al/sub 2/O/sub 3/ Ge-on-insulator (GOI) MOSFETs are fabricated and confirmed by TEM. At the comparable leakage current of 1.5/spl times/10/sup -3/ A/cm/sup 2/ at 1 V and same 1.7 nm EOT with Al/sub 2/O/sub 3//Si p-MOSFETs, the Al/sub 2/O/sub 3//GOI devices show 2.5 times and 1.3 times higher hole mobility than respective Al/sub 2/O/sub 3//Si control devices and SiO/sub 2//Si universal mobility at E/sub eff/ of 1 MV/cm.