Application of top HfSiON layer for improved poly-gated HfO/sub 2/ PMOSFET performance

In this paper, application of amorphous HfSiON layer on HfO/sub 2/ was evaluated for improved poly-Si gated HfO/sub 2/ PMOSFET performance.HfSiON process by reoxidation method was developed and the effects of its use as a top layer of HfO/sub 2/ for PMOSFET were investigated. The top HfSiON layer was demonstrated to improve the characteristics of PMOSFET through better thermal stability and immunity to boron diffusion compared to HfON.