Damageless sputter deposition for metal gate CMOS technology

In this paper, it is demonstrated that excellent gate-oxide integrity can be achieved in Mo-gated MOSFETs fabricated using a conventional process flow, by eliminating high-energy particle bombardment during the gate sputtering process. P-channel MOSFETs were fabricated using a conventional process with reasonably thin gate oxide (2.5 nm thermal SiO/sub 2/), and source/drain formation by BF/sub 2+/ implantation (15 keV, 3/spl times/10/sup 15/ cm/sup -2/) followed by a 950/spl deg/C, 1 minute rapid thermal anneal. Three different gate materials (150 nm thick) were studied. Mo sputtered without the PCT, Mo sputtered with the PCT, and LPCVD p/sup +/ poly-Si.