600V-IGBT3: trench field stop technology in 70 /spl mu/m ultra thin wafer technology

The established trench field stop technology called IGBT3 is transferred to 600V and supplements the 1200V and 1700V family. Besides am adjustment of cell geometry and pitch for an optimum compromise between on-state loss and short-circuit current the ability to process ultra thin wafers with a thickness of 70 /spl mu/m is the most demanding requirement for this device. One of the most important steps with the 600V device is the extension of the maximum junction temperature to 175/spl deg/C which is an increase of 25/spl deg/C in comparison to commonly known IGBT chips.