A new Si:C epitaxial channel nMOSFET architecture with improved drivability and short-channel characteristics

We present for the first time epitaxially grown Si:C nMOSFET channels acting as boron blocking barriers containing up to 1.4% substitutional carbon. The high impact of interstitial carbon and epitaxial growth conditions on electron inversion layer mobility is evidenced for the first time. We achieved super-retrograde channel and pockets profiles for improved short channel effects control. This allows improved I/sub ON/(850 /spl mu/A//spl mu/m)/I/sub OFF/(200 nA//spl mu/m) ratio as compared to non-carbonated short channel devices without any degradation of transport properties or gate oxide integrity.