A physics-based model of short channel MOSFET including velocity overshoot

This paper presents a physics-based modeling of short channel MOSFET including velocity overshoot. The model is developed based on the solution of energy balance equation under the assumption of drifted Maxwellian distribution. Electron temperature is analytically obtained along the channel and the thermoelectric current is then derived. The model includes the effects of the mobility degradation, channel length modulation, drain induced barrier lowering and parasitic drain source resistance. The theoretical predictions of the model are compared with the experimental data and shown to be in good agreement over a wide range of bias conditions.