MOS characteristics of ultrathin SiO/sub 2/ prepared by oxidizing Si in N/sub 2/O

MOS characteristics of ultrathin gate oxides prepared by furnace oxidizing Si in N/sub 2/O have been studied. Compared to control oxides grown in O/sub 2/, N/sub 2/O oxides exhibit significantly improved resistance to charge trapping and interface state generation under hot-carrier stressing. In addition, both charge to breakdown and time to breakdown are improved considerably. MOSFETs with N/sub 2/O gate dielectrics exhibit enhanced current drivability and improved resistance to g/sub m/ degradation during channel hot-electron stressing.<
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