Low-frequency noise behavior of 0.15- mu m gate-length lattice-matched and lattice-mismatched MODFETs on InP substrates

Experimental data are presented on equivalent gate noise voltage from 1 to 10/sup 5/ Hz obtained from lattice-matched and strained InGaAs quantum-well modulation-doped field effect transistors (MODFETs). In both types of devices excess generation-recombination (g-r) noise is observed at or below 100 Hz above an 'apparent' background 1/f noise with spectral intensity ranging from 0.5*10/sup -17/ to 2*10/sup -17/ V/sup 2/-Hz/sup -1/-cm/sup 2/ at 1 Hz. These results are comparable to those reported by S.M.J. Liu et al. (1986) for the pseudomorphic MODFETs.<
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