Single crystal silicon four-terminal nano-wire shear stress gauge for nano mechanical sensors

P-type single crystal silicon four-terminal nanowire shear stress gauge (Si FSSG) was fabricated by electron-beam direct writing. The piezoresistance was investigated in order to demonstrate the usefulness of these sensing elements as mechanical sensors. The shear piezoresistance coefficient /spl pi//sub 44/ was found to be 77.4/spl times/10/sup -11/ Pa/sup -1/ at Ns=9-10/sup 19/ cm/sup -3/. This value was 54.8 % larger than the value obtained from p/sup +/ diffused piezoresistors, which are used in conventional mechanical sensors.