Observation of substrate-type inversion in high-resistivity silicon structures irradiated with high-energy electrons

Several silicon devices, including test structures and double-sided microstrip detectors, have been irradiated with a 900 MeV electron beam. The irradiated test structures have been used to quantify bulk and surface damage effects caused by the incident particles. Bulk-type conversion from n to p-type has been observed to occur at fluences of order 10
¹⁴
cm
^-2
. For the damage constant α, a NIEL normalized value of about 3×10
^-17
A/cm has been obtained. The results confirm that high-energy electrons, like neutrons and protons, are very effective in creating bulk damage in silicon.