Temperature dependence of In/sub 0.53/Ga/sub 0.47/As ionisation coefficients

Avalanche multiplication in In/sub 0.53/Ga/sub 0.47/As has been determined from photomultiplication measurements over the temperature range of 20 - 300 K for a series of p-i-n and n-i-p diodes. A negative temperature dependence is observed in the avalanche multiplication of In/sub 0.53/Ga/sub 0.47/As at electric fields over 200 kV/cm, contrary to the positive temperature dependence of collector multiplication previously observed in InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors. Based on the photomultiplication measurements on p-i-n and n-i-p diodes, the temperature dependence of the electron and hole ionisation coefficient from 20 - 300 K in In/sub 0.53/Ga/sub 0.47/As is also examined.