Broad-band optical receiver for multigigabit-per-second (40Gb/s) optical communication systems

This paper presents the design and characterization of a high-bandwidth transimpedance GaAs MMIC receiver suitable for 40 Gbps data transmission rates. The circuit was implemented on a MMIC PH15 process from United Monolithic Semiconductors (UMS). This process features 0.13 /spl mu/m pseudomorphic transistors (0.135 /spl mu/m PHEMT) with low resistance, good reliability and an f/sub t/ of approximately 100 GHz. This circuit presents a 49 dB/spl Omega/ gain, low noise figure and wide bandwidth considering detector input capacitance in excess of 100 fF. An analysis involving noise, stability and the influence of bond-wire inductance on the overall circuit behaviour was performed. Input capacitance tolerance and output impedance matching conditions were evaluated. On-going on-wafer characterisation results are also presented and compared with simulation data, showing good agreement.