A design of DC-2 GHz linear-controlled CMOS attenuator

To reaffirm the use of a mainstream CMOS process for designing passive-like attenuator structures, a linear-controlled variable attenuator is realized with a 0.35 /spl mu/m CMOS process, which covers the broad frequency band (DC-1 GHz). Compared to existing passive-like CMOS attenuators, it is demonstrated that this work advances the frequency band from MHz to GHz, and reduces the size. To elevate the limit of bandwidth, an alternative topology, which covers DC-2 GHz, is proposed as well. The operation principle and its characteristics are explained in detail.