A programmable 256K CMOS EPROM with on-chip test circuits

HIGH DENSITY EPROMs require fast access time, low power consumption, high speed programming and short screening time. This paper will describe a 256K CMOS EPROM designed to meet these requirements. Access time of lOOns has been achieved by utilizing an N-well CMOS peripheral circuit. Fast programming was realized by introducing a DSA’ (diffusion self-align) structure into the cell. Additionally test circuits have been implemented to alleviate lengthy screening tests