Triple poly II DRAM memory cell

USING CONVENTIONAL PROCESSING techniques, a DRAM cell utilizing almost the entire cell area for the storage capacitor has been developed. Thus, even with 300 Å dielectric material, the storage capacitance has been found to provide improved results over previously reported 256K DRAM cells ^1,2,3. And without using silicide ^ 3,4,5 double metal process ^2 or multiple row decoders, upgraded performance has been possible.