Low loss PIN diode for high power MIC phase shifter

A 5kW PEAK POWER MIC phase shifter has been constructed with a newly developed deep diffused, low loss PIN diode of breakdown voltage greater than 1500V. A 3 bit (180°, 90°, and 45°) F-band MIC hybrid phase shifter, Figure 1, has an average loss of 1 dB under 50 mA forward bias and -4OV reverse bias conditions, which is less than the loss of any previously reported high power phase shifter under the samk bias conditions. This paper will describe the device fabrication technology of the high breakdown voltage, low loss (R, < 0.2 ohm at 50 mA, Q > 1000 at -40 volt) silicon PIN diode, and its application to the high pulsed power, MIC diode phase shifter