Three decades of our graduate research and education in compound semiconductor materials and devices

In the 37 years of activity in Cornell University's research on compound semiconductor materials and devices, much has been discovered, and many students have been educated. The materials include GaAs, AlGaAs, InGaAs, InAlAs, InGaP, GaN, AlGaN, and InN. The devices have included microwave MESFETs, HEMTs, and HBTs, as well as semiconductor lasers for high speed modulation. The students and results have been hired and transferred to industry, where they have made strong contributions to devices for radar and communication.