The Restructuring of Aluminum on Gallium Arsenide

The restructuring of aluminum (Al) on GaAs has been observed on low-power GaAs field-effect transfers (FETs) and on special test structures. For 4 X 10
⁴
heating and cooling cycles, temperature swings as low as 90°C produced restructuring. Restructuring is weakly dependent on deposition temperature, and no change in the Al resistance was observed.