A Limiter for High-Power Millimeter-Wave Systems

A high-power limiter for use in millimeter-wave systems has been designed and demonstrated. The RF control is provided by an array of p-i-n diodes fabricated into the surface of a high-resistivity silicon window. Orientation-dependent etching of the silicon is used to build diodes with parallel injection surfaces. The window is mounted into the waveguide using a metal membrane which simplifies construction and lowers cost.