Rapid isothermal processing of Si/sup +//P/sup +/ and Mg/sup +//P/sup +/ co-implantations into InP

The authors present the results of investigations on electrical properties of Si/sup +//P/sup +/ and Mg/sup +//P/sup +/ co-implanted InP wafers subjected to rapid isothermal processing. It was found that a significant improvement of activation of Si and Mg in InP can be obtained by P/sup +/ co-implantations and rapid isothermal processing. The annealing cycle was at temperatures from 825 to 875 degrees C for 5 and 14 s. The maximum dopant activation and peak electron concentration for Si/sup +//P/sup +/ coimplants at doses of 1*10/sup 15//cm/sup 2/ were 70% and 5*10/sup 19/ cm/sup 3/. A high hole concentration of 1.1*10/sup 19//cm/sup 3/ was obtained by Mg/sup +//P/sup +/ coimplantations.<
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