InternalQswitching in GaAs- GaxAl1-xAs heterostructure lasers

Efficient internal
Q
switching and delay effects are observed in a range of temperatures from less than 100 to 400°K in solution grown GaAs-Ga
x
Al
1-x
As heterostructure injection laser diodes. The characteristic transition temperature T
t
above which long stimulated emission delays are found, decreases with the laser cavity length (i. e., higher threshold current density). T
t
also decreases with the thickness of the active region. The onset of hole injection seems to occur simultaneously with the appearance of the pronounced delay and
Q
-switching effects.