Ga0.47In0.53As/InP double-heterostructure and multiquantum well lasers grown by chemical beam epitaxy

We reported the successful preparation by chemical beam epitaxy (CBE) and performance characteristics of Ga
0.47
In
0.53
As/InP DH and MQW lasers emitting at
1.47-1.72 \mu
m. The very low threshold current densities of 1.3 and 1.5 kA/cm
²
obtained for DH and MQW laser wafers, respectively, suggest that the present materials and heterointerfaces are of high quality. In fact, these
Jth
's are the lowest obtained thus far for such lasers. Such results are consistent with the extremely high-quality Ga
0.47
In
0.53
As epilayers and Ga
0.47
In
0.53
As/InP quantum well structures also obtained grown by this technique. Differential quantum efficiency of ∼ 18 percent per facet was obtained for both DH and MQW lasers. Further, we were also able to show that there was a definite improvement in T
0
from
\sim 35-45
K for DH laser wafers to
\sim 65-80
K for MQW laser wafers in contrast to previous experimental results. This, we believe, is due to the improvement in both material and heterointerface qualities of the present layer structures as a result of the different growth chemistries occurring on the substrate surface when compared to molecular beam epitaxy and better control of composition transition and cleaner growth environment in CBE than in metalorganic chemical vapor deposition.