Device characteristics of (Al,Ga)As lasers with Ga(As,Sb) active layers

Device characteristics of double heterostructure lasers with Al
0.4
Ga
0.6
As confinement layers and GaAs
0.99
Sb
0.01
active layers are presented. Average emission wavelengths have been increased from 0.87 μm for undoped active layers to 0.88 μm for
2 \times 10^{17}
cm
^-3
Ge doped active layers with a "wash" melt preceding the growth of the active layer and to 0.89 μ for
1 \times 10^{18}
cm
^-3
Mg doped active layers grown following a "wash" melt. Threshold currents for lasers from 21 wafers are examined for several growth conditions and compared with Al
0.08
Ga
0.92
As active layer devices. Device resistance, external quantum efficiency, device degradation, and pulsed and CW threshold currents as a function of temperature are also discussed.