The temperature dependence of the threshold current of GaInAsP/InP DH lasers

The temperature dependence of the threshold current of GaInAsP/InP lasers was considered in terms of linear gain, loss, and carder lifetime. The linear gain was calculated taking into account electronic intraband relaxation effects. The carrier lifetime, intraband relaxation time, loss in the active region, and dipole moment, all of which determine the threshold condition, were estimated from the experiments. The main loss mechanism which determines the temperature dependence of the differential quantum efficiency appears to be the absorption due to transitions between the split-off and heavy-hole valence bands. The temperature dependence of the theoretical threshold current I
th
calculated in terms of these parameters was compared with the measured results and reasonable agreement was obtained.