Influences of interfacial recombination on oscillation characteristics of InGaAsP/InP DH lasers

This paper presents the influences of interfacial recombination on the oscillation characteristics of InGaAsP/InP DH lasers. The effects of interfacial recombination at the two InP-InGaAsP interfaces, and a theoretical study of the oscillation characteristics such as threshold current density and differential quantum efficiency are discussed and compared with experimental results. The effects of interfacial recombination on the temperature dependence of threshold current are also examined.