Fabrication and lasing properties of mesa substrate buried heterostructure GaInAsP/InP lasers at 1.3 µm wavelength

Fabrication and lasing properties of novel GaInAsP/InP injection lasers at 1.3 μm, with buried heterostructure grown on mesa substrate and fabricated by single-step crystal growth are reported. In this mesa substrate buried heterostructure (MSB) laser, the GaInAsP active layer was grown separately on the top of a mesa structure formed along the surface of a