1.11-1.67 µm

(100) GalnAsP/InP DH lasers were achieved in the range of 1.11-1.67 μ m by LPE technique. Low normalized threshoid DH lasers were obtained in the wavelength range of 1.2-1.65 μm by twophase solution technique under the-same temperature conditions of the soak temperature T
_s
= 670°C, the growth temperature T
_g
= 631 °C, and the sanie cooling rate of 0.81°C/min. Growth temperature dependence of lasing wavelength is also given. Normalized threshold current density J
_th
/d of ordinary laser, which. consists of three4ayei structUre was 4-5 kA/cm
²
/μm in the range of 1.2-1.52 μm, and that of longer wave~ engtlt laser; which consists of four-layer structure with an additional "antimeltback" layer, wa5 5-6 kA/cm
²
/μm in the range of 1.45-1.65 μm. Lasing thresholds of these laser diodes increased more rapidly with temperature above the break point of about 250-270 K. The temperature dependence of lasing wavelength was about 4 AÅ/deg at 1.3 μm wavelength and 5 Å/deg at 1.55 μm. wavelength. The spectral width was about 1000 Å at 1.3 μm and 1400 A at 1.55 μm. Room temperature CW operation of longer wavelength lasers was obtained at λ = 1.51 μm with the threshold current of 200-350 mA.