DC to 40 GHz on-wafer package for RF MEMS switches

A silicon micromachined on-wafer DC to 40 GHz packaging scheme for RF MEMS switches is presented. The designed on-wafer package has an insertion loss which is less than 0.4 dB up to 40 GHz (including a 2700 /spl mu/m long through line) and a return loss below -25 dB up to 40 GHz. Its fabrication process is designed so as to be completely compatible with the MEMS switch process, hence allowing the parallel fabrication of all the components on one wafer. The proposed on-wafer packaging approach requires no external wiring to achieve signal propagation and thus it has the potential for lower loss and better performance at higher frequencies.