Optimization of the /spl Delta/E effect in thin films and multilayers by magnetic field annealing

The /spl Delta/E effect of amorphous (Fe/sub 90/Co/sub 10/)/sub 78/Si/sub 12/B/sub 10/ and Tb/sub 40/Fe/sub 60/ thin films as well as of Tb/sub 40/Fe/sub 60//Fe/sub 50/Co/sub 50/ multilayers deposited on Si substrates using magnetron sputtering has been investigated. Influences of sputtering parameters and especially annealing conditions on the /spl Delta/E effect are discussed. In a field-annealed amorphous (Fe/sub 90/Co/sub 10/)/sub 78/Si/sub 12/B/sub 10/ thin film, the /spl Delta/E effect is about 30%, assuming the Young's modulus of the film as 150 GPa. It was found that in case of thin-film substrate compounds, the magnetostrictive susceptibility is the determining factor of the size and field dependence of the /spl Delta/E effect.