Contents 1. Introduction
One of the main challenges of modern photonics is to increase the data transfer rate with low power consumption. The weakest point is the low coupling between the photonic devices on the chip and the emitter/detector of optical radiation [1]. Therefore, the key steps to solve this problem are to improve the manufacturing process of photonic devices and to place the emitter and detector of optical radiation on a chip [2]. The one of existing solutions is the integration of photonic circuits with the vertical-cavity surface-emitting laser (VCSEL) [3]. However, this integration has a drawback related to placing the VCSEL on the chip and the impossibility of scaling the photonic circuit. Therefore, it is necessary to use materials and films that allow the required number of emitters and detectors on the chip. In recent times the carbon-based low-dimensional systems such as carbon nanotubes (CNTs) [4] or graphene [5] are promising hybrid platforms for creating nanoscale emitters. Also, the advantages of such emitters are the ability to control emission with current modulation, the ability to operate in the visible [6] and near-infrared [7] ranges, as well as a high modulation rate in the GHz range [8] and compatibility with photonic integrated circuits on a silicon nitride platform. The significant advantage of the emitter with graphene instead of CNTs is the planar, uniform, and bright light emission due to its two-dimensional geometry [9].
