Abstract:
MIS structures with a double-layer gate stack were fabricated. The measurements revealed an anomalous frequency-dependent shift of the C-V characteristics. The effect is ...Show MoreMetadata
Abstract:
MIS structures with a double-layer gate stack were fabricated. The measurements revealed an anomalous frequency-dependent shift of the C-V characteristics. The effect is presented and discussed in terms of the flat-band voltage shift and the oxide effective charge modulation.
Published in: 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
Date of Conference: 01-30 September 2020
Date Added to IEEE Xplore: 09 March 2021
ISBN Information:
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