Efficient parameter extraction techniques for a new surface-potential-based MOS model for RF applications

Efficient parameter extraction techniques for a new surface-potential-based MOS model are outlined. The new model is suitable for RF CMOS design because it has improved modelling of surface potential, mobility and conductance. The extraction techniques are based on analytical manipulation of the model equations and allow parameters to be extracted using as few as 12 measurements per device.

Introduction

This paper deals with the development of efficient parameter extraction techniques for a new surface-potential-based MOS model, which has been shown to be appropriate for RF CMOS^[1]. This is the first time quick extraction techniques have been developed for a surface-potential-based model, while they are well established for -based models^[2].