Abstract:
Efficient parameter extraction techniques for a new surface-potential-based MOS model are outlined. The new model is suitable for RF CMOS design because it has improved m...Show MoreMetadata
Abstract:
Efficient parameter extraction techniques for a new surface-potential-based MOS model are outlined. The new model is suitable for RF CMOS design because it has improved modelling of surface potential, mobility and conductance. The extraction techniques are based on analytical manipulation of the model equations and allow parameters to be extracted using as few as 12 measurements per device.
Published in: ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153)
Date of Conference: 19-22 March 2001
Date Added to IEEE Xplore: 07 August 2002
Print ISBN:0-7803-6511-9
Contents 