Abstract:
We propose a new method to extract the effective channel length for a double-diffused MOSFET (DMOSFET). This method models the DMOSFET by using two MOSFETs serially conne...Show MoreMetadata
Abstract:
We propose a new method to extract the effective channel length for a double-diffused MOSFET (DMOSFET). This method models the DMOSFET by using two MOSFETs serially connected to each other. The effective channel lengths for these two MOSFETs are extracted from the single relation between the effective channel length and the gate voltage. The effective channel lengths extracted by this method agree with the distance between the source and the drain fairly well.
Published in: ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153)
Date of Conference: 19-22 March 2001
Date Added to IEEE Xplore: 07 August 2002
Print ISBN:0-7803-6511-9
Contents 