Charge Plasma High Voltage PIN Diode Investigation

In this paper, we investigate the new approach on designing a high voltage PIN diode without introducing any doping into the silicon. The concept of charge plasma is basically using different metals with appropriate work-function as anode and cathode contacts, which cause the formation of "p" and "n" plasma regions in silicon respectively. We have used the Silvaco Atlas simulation to compare the forward and reverse I-V characteristics of the proposed device with the conventional PIN diode. Also, we looked at the temperature dependency of their reverse saturation current. We demonstrate that by using the charge plasma concept, the proposed CP-PIN diode and conventional PIN diode have identical characteristics.