A > 3 kV/2.94 m $\Omega\cdot$ cm2 and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering Technique

In this letter, we report on demonstrating high-performance lateral GaN Schottky barrier diode (SBD) on silicon substrate with low turn-on voltage (
$\text{V}_{\mathbf {on}}$
), high breakdown voltage (BV) with low reverse leakage current (
$\text{I}_{\mathbf {R}}$
), and high power figure of merit (P-FOM) through anode engineering technique. Lateral GaN SBD with anode-cathode distance (
$\text{L}_{\mathbf {AC}}$
) of
$25~\mu \text{m}$
demonstrates a
$\text{V}_{\mathbf {on}} =0.38$
V, a BV of >3 kV at a
$\text{I}_{\mathbf {R}}$
of
$10\mu \text{A}$
/mm and differential specific ON-resistance (
$\text{R}_{\mathbf {on,sp}}$
) of 2.94
$\text{m}\Omega ~\cdot $
cm
²
, yielding a high P-FOM of more than 3 GW/cm
²
. To the best of our knowledge, this P-FOM is the highest value among all the GaN SBDs on any substrates. Combining with 5 A forward current (
$\text{I}_{\mathbf {F}}$
) and reverse BV >2 kV of a large periphery device with perimeter of 20 mm, GaN SBD with anode engineering technique shows its great promise for next generation power electronics.