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Sensing Properties of Lateral Graphene/h-BN Heterostructure towards NH3: A First Principles Study | IEEE Conference Publication | IEEE Xplore

Sensing Properties of Lateral Graphene/h-BN Heterostructure towards NH3: A First Principles Study


Abstract:

Adsorption of NH3 molecule on graphene/hexagonal boron nitride heterostructure (G/h-BN) was investigated by applying density functional theory. Structural, electronic and...Show More

Abstract:

Adsorption of NH3 molecule on graphene/hexagonal boron nitride heterostructure (G/h-BN) was investigated by applying density functional theory. Structural, electronic and adsorption properties of this heterostructure towards NH3 are reported. The N site at G/h-BN interface has been shown to have the highest adsorption energy and the amount of adsorption energy indicates a physical adsorption. Despite the weak interaction between the molecules and the surface, a measurable signal for sensing applications can be expected due to the sensitivity of tunneling current to the changes in electronic structure. Our results show that the proposed device could have a higher sensitivity comparing to the pristine graphene and pure h-BN.
Date of Conference: 30 April 2019 - 02 May 2019
Date Added to IEEE Xplore: 05 August 2019
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Conference Location: Yazd, Iran

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