Microscopic Crystal Phase Inspired Modeling of Zr Concentration Effects in Hf1-xZrxO2Thin Films

In this paper, we theoretically and experimentally investigate the Zr concentration dependent crystal phase transition of Hf
_1-x
Z
_x
O
₂
(HZO) and the corresponding evolution of dielectric (DE), ferroelectric (FE) and anti-ferroelectric (AFE) characteristics. Providing the microscopic insights of strain induced crystal phase transformations, we propose a physics based model that shows good agreement with our experimental results for 10nm Hf
_1-x
Z
_x
O
₂
(with x=0 through 1). Utilizing our model, we analyze HZO-FET operation as a non-volatile memory device for different x.