Power module design for utilizing of WBG switching performance

Modern power semiconductors are able to reduce significantly switching losses by faster switching. This paper shows that the utilization of this capability is possible only by low inductive integration of the switching cell and driver's booster stage. The gain of well-designed integration is a few nanoseconds fast and nearly oscillation free switching curves, although no external gate resistors are used. Manufacturing such integrated power module (InPM) considering electrical, thermal and mechanical integration as well as manufacturing aspects is possible using modern packaging technologies offering higher degree of design freedom.