500°C SiC-based driver IC for SiC power MOSFETs

This paper reports on a SiC BJT-based driver IC for driving SiC power MOSFETs operational from room temperature up to 500° C. The driver features design simplicity, smaller chip size, smaller propagation delay, and relatively high driving currents compared to similar SiC-based drivers. These properties are due to its fewer number of gain buffer stages and relatively higher transconductance of the BJTs as compared to SiC MOSFETs. The high-temperature operation of the driver, as well as the other advantages of the SiC BJT-based driver, suggest it as a viable candidate to be integrated with SiC MOSFETs in a power module.