Performance Comparison of s-Si, In0.53Ga0.47As, Monolayer BP, and WS2-Based n-MOSFETs for Future Technology Nodes—Part I: Device-Level Comparison

To continue with the scaling of high-performance transistors, alternate materials and device architectures are being explored as replacements for contemporary strained-silicon (s-Si) FinFETs. While III-V materials, such as In
_0.53
Ga
_0.47
As, offer higher electron mobilities and injection velocities than s-Si, emerging 2-D materials and nanowire (NW) device architectures promise better immunity to short-channel effects. In this paper, we present a detailed device-level performance comparison of s-Si, In
_0.53
Ga
_0.47
As, monolayer black phosphorus (BP), and WS
₂
-based planar and multigate (Fin and NW) n-MOSFETs across three successive future technology nodes. The analysis incorporates both intrinsic device characteristics obtained from an advanced quantum mechanical simulation tool and the effect of nonidealities using a physics-based analytical model. The results indicate that 2-D materials, such as monolayer BP, offers higher ON currents than s-Si and In
_0.53
Ga
_0.47
As for planar device architectures. However, compared to modern s-Si and In
_0.53
Ga
_0.47
As Fin and NW FETs, monolayer BP and WS
₂
double-gate MOSFETs are reported to offer lower ON currents due to the smaller footprint at scaled technology nodes.