High Volume Manufacturing of Lasers and Photo-Diodes on 4 Inch InP in GaAs IC Wafer Fabrication Facility

The massive growth of data traffic generated by human and machine activity has significantly increased the demand for photonics products for optical communications. In order to meet the current market demand at lower price points, it is necessary to increase the production volume and the wafer size for printing more devices. For this reason, high-volume manufacturing processes for lasers and photodiodes were developed using the existing equipment in a GaAs IC wafer fabrication facility, without a major capital investment. A variety of highly reliable, high-performance directly modulated edge emitting lasers and front illuminated photodiodes were manufactured on 4 inch InP substrates.