Abstract:
The effective channel length of LD (lateral double diffused) MOSFET is accurately extracted and is applied to develop its circuit simulation model, which has the physical...Show MoreMetadata
Abstract:
The effective channel length of LD (lateral double diffused) MOSFET is accurately extracted and is applied to develop its circuit simulation model, which has the physical meaning of the channel length and so on. This model is consisted of a simple MOSFET, gate-voltage dependent resistor and three resistors. It is confirmed that the errors between the measured electrical characteristics and the calculated ones are less than 5 percent.
Published in: ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)
Date of Conference: 16-16 March 2000
Date Added to IEEE Xplore: 15 April 2003
Print ISBN:0-7803-6275-7
