Assessing Lock-On Physics in Semi-Insulating GaAs and InP Photoconductive Switches Triggered by Subbandgap Excitation

The time-dependent photocurrent response in semi-insulating GaAs and InP was studied based on 1-D, time-dependent simulations with a focus on the Lock-On phenomenon. The results underscore the role of trap-to-band impact ionization from deep traps in rapid charge creation and its subsequent propagation much like a streamer. The numerical results compare well with the actual data. The main findings are that deeper traps nearer the valence band at higher densities, materials with larger high-field drift velocity, and cathode-side illumination would all aid in attaining Lock-On. These could be useful guidelines for producing Lock-On in new materials such as GaN for high-power applications.