Study of Al0.22Ga0.78As/In0.18Ga0.82As/GaAs PHEMT with delta doping and lower Al mole fraction

In this paper, DC and RF performance of a pseudomorphic high electron mobility transistor (PHEMT) with an Al
_0.22
Ga
_0.78
As supply layer, In
_0.18
Ga
_0.82
As channel layer built on a p-type GaAs, with a delta doping of thickness 1 nm has been analyzed. Analysis are carried out to obtain output characteristics curve (I
_d
-V
_ds
), transfer characteristics curve (I
_d
-V
_gs
), threshold voltage (from the I
_d
-V
_DS
plot), breakdown voltage (from the I
_d
-V
_ds
plot), transconductance, subthreshold slope and unity current gain cut off frequency (fT) of the. The simulated structure exhibits an transconductance of 525 mS/mm (1.1 × improvement compared to existing structure), threshold voltage Vt= -1.4 V at V
_ds
= 6 V, maximum drain current current (I
_d
) of about 596 mA/mm at V
_gs
= 0 V (1.2 × improvement) and fT of 3.1 GHz. All simulations are performed using Silvaco ATLAS
^TM
.