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Evaluation of LPCVD SiNx Gate Dielectric Reliability by TDDB Measurement in Si-Substrate-Based AlGaN/GaN MIS-HEMT | IEEE Journals & Magazine | IEEE Xplore

Evaluation of LPCVD SiNx Gate Dielectric Reliability by TDDB Measurement in Si-Substrate-Based AlGaN/GaN MIS-HEMT


Abstract:

Si-substrate-based AlGaN/GaN high-electron mobility power transistors with low pressure chemical vapor deposition (LPCVD) SiNx as gate isolation material are fabricated o...Show More

Abstract:

Si-substrate-based AlGaN/GaN high-electron mobility power transistors with low pressure chemical vapor deposition (LPCVD) SiNx as gate isolation material are fabricated on a 6-in wafer by CMOS compatible process. The dielectric failure by forward-biased constant-voltage stress time-dependent dielectric breakdown (TDDB) measurements at various temperatures (from room temperature to 250 °C) and their statistical Weibull analysis are compared. Impact of gate dielectric area and multifinger on the SiNx TDDB characteristics is also discussed. Using thermal microscope imager, the leakage current spots have been identified. The mean time to failure decreases with the increasing finger numbers in exponential form. We also predict the device ( {W}_{G}= {0.25} mm) with 35-nm-thick LPCVD SiNx gate dielectric can survive at a positive gate voltage of {V}_{\text {GS}}= {15} V for a 10-year time-to-breakdown lifetime (100 ppm and {T}= {25} °C) and {V}_{\text {GS}}= {7.5} V for a 10-year time-to-breakdown lifetime (100 ppm and {T}= {250} °C).
Published in: IEEE Transactions on Electron Devices ( Volume: 65, Issue: 5, May 2018)
Page(s): 1759 - 1764
Date of Publication: 03 April 2018

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