Performance improvement in 4H-SiC UMOSFET with HfO2/Al2O3 gate dielectric stack

In this work 4H-SiC U-shaped gate trench MOSFET (UMOSFET) is analyzed with gate dielectric stack of HfO
₂
/Al
₂
O
₃
and the results are compared with the other gate dielectrics such as SiO
₂
, HfO
₂
, Al
₂
O
₃
and with dielectric stack HfO
₂
/SiO
₂
as well. The proposed gate dielectric stack results in improved performance of UMOSFET as compared to the other dielectrics with a lower threshold voltage as well as higher breakdown voltage.