Analysis of Al0.22Ga0.78As/In0.18Ga0.82As/GaAs Pseudomorphic HEMT device with higher conductivity

In this paper, we have analyzed the DC & RF performance of a Pseudomorphic high electron mobility transistor (PHEMT) with an Al
_0.22
Ga
_0.78
As supply layer, In
_0.18
Ga
_0.82
As channel layer built on a p-type GaAs. Output characteristics curve (I
_d
-I
_DS
), transfer characteristics curve (I
_D
-V
_GS
), transconductance (from the I
_D
-V
_GS
plot), subthreshold slope, unity current gain cut off frequency (f
_T
) and maximum oscillation frequency (f
_max
) of the device are obtained. The simulated structure shows an improved transconductance of 522 mS/mm, threshold voltage V
_t
= -1.1 V at V
_DS
= 6 V, peak current (Id) of about 600 mA/mm at V
_GS
= - 0.4 V. The proposed device achieves f
_T
= 3.16 GHz and f
_max
= 31.6 GHz. All simulations are performed using Silvaco ATLASTM.